以双字线双阈值4T SRAM为基础的存内计算设计

蔺智挺，钮建超，吴秀龙，彭春雨

Computing In-Memory Design Based on Double Word Line and Double Threshold 4T SRAM

LIN Zhiting, NIU Jianchao, WU Xiulong, PENG Chunyu

计算机科学与探索 . 2021, (11): 2116 -2126 . DOI: 10.3778/j.issn.1673-9418.2011090